? e94706a5x-te sony reserves the right to change products and specifications without prior notice. this information does not convey any license by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustrating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. absolute maximum ratings (ta=25?) supply voltage v cc 10 v operating temperature topr ?0 to +80 ? storage temperature tstg ?0 to +100 ? recommended operating condition 5v description the DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate. the element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position. features low power consumption 38? (typ.) at v cc =5v low magnetic field and high sensitivity 75mvp-p (typ.) at v cc =5v and h=4000a/m high reliability ensured through silicon nitride protective filming magneto-resistance element m-102 (plastic) electrical characteristics (ta=25?) DM-111A item symbol condition min. typ. max. unit total resistance midpoint potential output voltage r t v c v o h=4000a/m, q =45 v cc =5v , h=4000a/m revoiving magnetic field v cc =5v , h=4000a/m revoiving magnetic field 500 2.47 30 650 2.50 75 800 2.53 k v mvp-p
? DM-111A equivalent circuit introduction 1) power supplying pin output pin 2) sensitive direction vs. midpoint potential r a : resistance reduces as the magnetic field revolves. r b : resistance increases as the magnetic field revolves. r a r b 1 23 r a r b 123 max min h q r a r b 1 2 3 12 3 111a v cc c d b a e a b c d e direction of magnetic- flux incidence sensitive non-sensitive direction of magnetic- flux incidence midpoint potential hs v cc 2 h useful region changes occur to the output voltage at the saturation region of v-h curve according to the direction of magnetic flux. these changes provide for the operation. ?with one rotation of magnetic flux, signals for 2 periods are obtained.
? DM-111A 3) 0 biasing magnetic field (switching use) 4) 45 biasing magnetic field (analog use) h v v biasing magnet sensitive non-sensitive biasing magnetic field a a detected magnetic field + output gnd 1 2 3 biasing magnet sensitive non-sensitive biasing magnetic field v a a h detected magnetic field
? DM-111A applications 1. detection of revolution 2. position detecting 3. angular detection of rotating wheel 4. readind out of analog value 5. position detecting of revolving element magnetic conductors n s n n s s aaaa aaaa s n aaa aaa a n s n n s s n s n aaaa aaaa aaaa aa aa aa aa n aaa aaa s n electric current electric current aaaa aaaa aa aa n aaaa aaaa aa aa
? DM-111A circuits 2), 3), 5) 1), 2), 3), 5) bridge circuits how to make a biasing magnetic field ?stick a rubber of ferrite biasing magemt ?position an element between the poles of the permanent magnet. notes on application ?excute the solder of the lead line within 10 seconds at a temperature below 260? ?to fix the elements: when glue is used, do not apply mechanical stress to the elements. ?do not use this element in the dewy condition. vcc r 1 r 2 1 2 3 output x moving direction (x-derection) differential amplifier aa aa s n vcc r 1 r 2 1 2 3 aa aa a a a a a a differenntial amplifier moving direction (x-derection) biasing magnet output x output sony 111a (biasing magnet) aa aa a a a a a a sony 111a by coupling 2 pieces back to back and sticking item together in a bridge, the output voltage is doubled.
? DM-111A midpoint potential vs. magnetic field intensity 10000 20000 0 2.45 2.46 2.47 v c midpoint potential (v) h-revoluing magnetic field intensity (oe) 2.48 2.49 2.50 2.51 2.52 2.53 2.54 2.55 111a v cc gnd 111a v cc gnd v cc= 5v ta = 25?c midpoint potential vs. magnetic-flux incidence 0 2.45 2.46 2.47 v c midpoint potential (v) q -direction of magnetic-flux incidence (deg) 2.48 2.49 2.50 2.51 2.52 2.53 2.54 2.55 1.v cc= 5v 2. output 3. gnd h = 4000a/m ta = 25?c 111a 1 2 3 q 45 90 135 180 225 output voltage vs. magnetic fiels intensity 10000 20000 0 20 v o output voltage (mvp-p) h-revolving magnetic field intensity (oe) 40 60 80 100 v cc =5v ta=25?c 0 total resistance, output voltage vs. temperature 0 10 20 v o output voltage (mvp-p) ta-ambient temperature (?c) 30 40 50 60 70 80 90 100 h=4000a/m (revolving magnetic fiels) ?0 ?5 0 25 50 75 100 125 150 r t v o 400 500 600 700 800 900 r t total resistance (k w ) example representative characteristics
sony code eiaj code jedec code package weight 0.24g m-102 6.3 0.4 6.0 1.0 1.7 0.4 7.0 0.4 0.5 0.2 1.2 2.54 5.08 m-102 2.0 0.3 1.0 0.25 0.1 package outline unit : mm DM-111A ?
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